? 2010 ixys corporation, all rights reserved ds100246(03/10) v ces = 1200v i c1 10 = 50a v ce(sat) 4.2v genx3 tm 1200v igbt w/ diode high-speed pt igbt for 20-50 khz switching IXGN50N120C3H1 symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 3 0 v i c25 t c = 25 c 9 5 a i c110 t c = 110 c 5 0 a i f110 t c = 110 c 58 a i cm t c = 25 c, 1ms 240 a ssoa v ge = 15v, t vj = 125 c, r g = 2 i cm = 100 a (rbsoa) clamped inductive load v ce v ces p c t c = 25 c 460 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60hz t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 3 0 g sot-227b, minibloc g = gate, c = collector, e = emitter c either emitter terminal can be used as main or kelvin emitter g e c e c c e153432 features z optimized for low switching losses z square rbsoa z high current capability z isolation voltage 2500 v~ z anti-parallel ultra fast diode z international standard package advantages z high power density z low gate drive requirement applications z power inverters z ups z smps z pfc circuits z welding machines z lamp ballasts advance technical information symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 250 a t j = 125c 14 m a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 40a, v ge = 15v, note 1 4.2 v t j = 125c 2.6 v http://
ixys reserves the right to change limits, test conditions, and dimensions. IXGN50N120C3H1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 sot-227b minibloc (ixgn) symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. g fs i c = 40a, v ce = 10v, note 1 24 40 s c ies 4250 p f c oes v ce = 25v, v ge = 0v, f = 1mhz 455 p f c res 120 pf q g 196 n c q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 24 n c q gc 84 nc t d(on) 31 n s t ri 36 n s e on 2.0 m j t d(off) 123 n s t fi 64 n s e off 0.63 1.2 mj t d(on) 23 n s t ri 37 n s e on 3.0 m j t d(off) 170 n s t fi 315 n s e off 2.1 mj r thjc 0.27 c/w r thck 0.05 c/w inductive load, t j = 125c i c = 40a, v ge = 15v v ce = 0.5 ? v ces , r g = 2 note 2 inductive load, t j = 25c i c = 40a, v ge = 15v v ce = 0.5 ? v ces , r g = 2 note 2 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. reverse diode (fred) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v f i f = 50a, v ge = 0v, note 1 2.1 2.4 v t j = 125c 2.3 v i rm 50 a t rr 75 ns r thjc 0.30 c/w i f = 50a, v ge = 0v, -di f /dt = 2500a/ s, v r = 800v notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g .
? 2010 ixys corporation, all rights reserved f i g . 1. ou tp u t c h ar ac ter i s t i cs @ t j = 25o c 0 10 20 30 40 50 60 70 80 90 100 0123456 v ce - v o l t s i c - a m pere s v ge = 1 5 v 1 3 v 1 1 v 7v 5v 9v f i g . 2. exte n d e d ou tp u t c h ar ac ter i s t i cs @ t j = 25o c 0 25 50 75 100 125 150 175 200 225 250 275 0 5 10 15 20 2 5 3 0 v ce - v o l t s i c - a m peres v ge = 15v 1 3 v 7v 9v 11v 5v f i g . 3. ou tp u t c h ar ac ter i st i cs @ t j = 125o c 0 10 20 30 40 50 60 70 80 90 100 0 . 0 0 .5 1 .0 1 .5 2 .0 2 .5 3 .0 3 .5 4 .0 4 .5 5 .0 v ce - v o l t s i c - a m pe res v ge = 15 v 1 3 v 1 1 v 7v 5v 9v f i g. 4 . de p e nde nc e o f v c e (s a t) on j unc t i on t e m pe r a t ur e 0.5 0.6 0.7 0. 8 0. 9 1. 0 1. 1 1. 2 1. 3 25 50 75 1 0 0 1 25 150 t j - d e gr e e s c e nt i g r a de v ce ( s a t ) - n o r m a liz e d v ge = 15v i c = 100a i c = 50a i c = 25a f i g . 5. c o l l e c t o r -to -em i tter vo l t a g e vs. g a te- t o - em i tter vo l t ag e 3. 0 3. 5 4. 0 4. 5 5. 0 5. 5 6. 0 6. 5 7. 0 7. 5 8. 0 5 6 7 8 9 1 01 1 1 21 3 1 41 5 v ge - v o l t s v ce - v o l t s i c = 100 a t j = 2 5 o c 50 a 25 a fig . 6 . i nput a d m i t t a n c e 0 10 20 30 40 50 60 70 80 90 4 . 0 4 .5 5 . 0 5 .5 6 .0 6 .5 7 .0 7 .5 v ge - v o l t s i c - am p e r e s t j = 125oc 25 o c - 4 0 o c IXGN50N120C3H1
ixys reserves the right to change limits, test conditions, and dimensions. IXGN50N120C3H1 fi g. 7 . t r a ns c ondu c t a nc e 0 10 20 30 40 50 60 0 1 02 03 0 4 0 5 06 0 7 08 09 0 1 0 0 i c - a m p e re s g f s - s i emens t j = - 40o c 25oc 125o c fig. 1 0 . re v e r s e - bia s s a f e o pe r a t ing a r e a 0 20 40 60 80 100 20 0 400 600 800 1000 12 00 v ce - v o l t s i c - a m peres t j = 125o c r g = 2 ? dv / dt < 10v / n s fig. 8 . g a t e cha r ge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 12 0 140 160 18 0 200 q g - na n o co u l o m b s v ge - v o l t s v ce = 600v i c = 50a i g = 10m a fig. 9 . ca pa c it a n c e 10 100 1, 000 10, 000 0 5 10 15 20 25 30 35 40 v ce - v o l t s c a pa ci t a nce - p i co f a r a d s f = 1 mhz c ies c oes c re s fig. 11 . m a x i m um t r a ns i e nt t he r m a l im pe da nc e 0. 0 1 0. 1 0 1. 0 0 0 . 000 1 0 . 0 01 0. 0 1 0. 1 1 10 p u l s e w i dt h - s e c o nds z (t h ) jc - oc / w
? 2010 ixys corporation, all rights reserved fig. 1 2 . in duc t i v e s w it c h ing e n e r gy lo s s v s . ga te r e si st an ce 1.5 2. 0 2. 5 3. 0 3. 5 4. 0 4. 5 5. 0 5. 5 6. 0 2345 6789 1 0 1 1 1 2 1 3 1 4 1 5 r g - oh m s e of f - m ill ij o u l e s 2 3 4 5 6 7 8 9 10 11 e on - m ill ij o u le s e off e on - - - - t j = 12 5o c , v ge = 1 5 v v ce = 60 0v i c = 80a i c = 40a fig. 1 7 . indu c t iv e t ur n- of f s w it c h in g t i m e s v s . junc t i o n t e m p er at u r e 0 50 100 150 200 250 300 350 2 5 3 5 45 55 6 5 75 85 9 5 10 5 1 15 1 25 t j - d e gr e e s c e nt i g r a de t f i - n anos ec onds 11 0 12 0 13 0 14 0 15 0 16 0 17 0 18 0 t d ( off ) - nanoseconds t f i t d( o f f ) - - - - r g = 2 ? , v ge = 1 5 v v ce = 6 0 0 v i c = 40 a i c = 80a fi g. 1 5 . induc t iv e t u r n - o f f s w it c h ing t i m e s v s . g at e r e si st an c e 0 50 100 150 200 250 300 350 400 450 500 2345 6 789 1 0 1 1 1 2 1 3 1 4 1 5 r g - o h m s t f i - n anos ec onds 10 0 15 0 20 0 25 0 30 0 35 0 40 0 45 0 50 0 55 0 60 0 t d ( off ) - nanoseconds t f i t d ( of f) - - - - t j = 12 5o c , v ge = 1 5 v v ce = 6 0 0 v i c = 80a i c = 4 0 a f i g . 13 . i n d u ct i v e sw i t ch i n g e n er g y l o s s v s . co ll e c t o r cu rr e n t 0.0 0. 5 1. 0 1. 5 2. 0 2. 5 3. 0 3. 5 4. 0 2 0 30 4 0 50 60 7 0 80 i c - a m p e re s e of f - m i l l i j oul es 0 1 2 3 4 5 6 7 8 e on - m illij o u le s e off e on - - - - r g = 2 ? , v ge = 1 5 v v ce = 60 0v t j = 12 5o c t j = 25oc f i g . 14 . i n d u ct i v e sw i t ch i n g e n er g y l o s s v s . ju n ct i o n t em p er at u r e 0. 0 0.4 0. 8 1. 2 1. 6 2. 0 2. 4 2. 8 3. 2 3. 6 4. 0 25 35 45 5 5 65 75 85 9 5 10 5 115 1 25 t j - d e g r ees c e n t i g rad e e of f - m illij o u le s 0 1 2 3 4 5 6 7 8 9 10 e on - m illij o u le s e off e on - - - - r g = 2 ? , v ge = 1 5 v v ce = 6 0 0 v i c = 8 0 a i c = 4 0 a fi g. 1 6 . induc t iv e t u r n - o f f s w it c h ing t i m e s v s . colle c t or curre n t 0 50 10 0 15 0 20 0 25 0 30 0 35 0 40 0 45 0 20 3 0 40 5 0 60 7 0 80 i c - a m p e re s t f i - n anosec onds 80 10 0 12 0 14 0 16 0 18 0 20 0 22 0 24 0 26 0 t d ( off ) - n anos econds t f i t d( off) - - - - r g = 2 ? , v ge = 1 5 v v ce = 6 0 0 v t j = 125oc t j = 2 5 o c IXGN50N120C3H1
ixys reserves the right to change limits, test conditions, and dimensions. IXGN50N120C3H1 fi g. 1 9 . induc t iv e t u rn- o n s w it c h ing t i m e s v s . col l e c t o r cu rr e n t 0 10 20 30 40 50 60 70 80 90 100 20 3 0 40 50 6 0 7 0 80 i c - a m p e res t r i - n a nos ec o nds 14 16 18 20 22 24 26 28 30 32 34 t d ( on ) - nanoseconds t r i t d ( on) - - - - r g = 2 ? , v ge = 1 5 v v ce = 60 0v t j = 125oc, 25oc fig. 2 0 . indu c t iv e t u rn - o n s w it c h in g t i m e s v s . j u nc t i on t e m p e r a t ure 20 40 60 80 10 0 12 0 14 0 2 5 35 45 5 5 65 7 5 85 9 5 10 5 1 15 12 5 t j - d e g r e e s cen t i g rad e t r i - n ano s e c ond s 20 22 24 26 28 30 32 t d ( on ) - nanoseconds t r i t d ( on) - - - - r g = 2 ? , v ge = 15v v ce = 6 0 0 v i c = 4 0 a i c = 8 0 a fig. 1 8 . indu c t iv e t u rn - o n s w it c h in g t i m e s v s . g at e r e si sta n ce 0 20 40 60 80 10 0 12 0 14 0 16 0 18 0 23456 78 9 1 0 1 1 1 2 1 3 1 4 1 5 r g - o h m s t r i - n anos e c ond s 15 20 25 30 35 40 45 50 55 60 t d ( on ) - nanoseconds t r i t d( o n ) - - - - t j = 12 5oc, v ge = 1 5 v v ce = 60 0v i c = 40a i c = 8 0 a fig. 2 1 . fo rw a r d cur r e n t v s . fo rw a r d v o lt a g e 0 10 20 30 40 50 60 70 80 0 . 0 0 .4 0 .8 1 .2 1 .6 2 .0 2 .4 2 .8 v f - v o l t s i f - a m p e res t j = 25o c t j = 125o c ixys ref: g_50n120c3h1(7n)03-01-10-a
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